[28p-PA2-1~4] 15.5 IV-group crystals and IV-IV-group mixed crystals

Thu. Mar 28, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

Poster Session 13:30〜15:30(PA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-PA2-1] Effect of boron dopants on formation of Ge layers using sputter epitaxy method

^○Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (Tokyo Univ. Agric. Technol.¹, NICT²)

[28p-PA2-2] Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si⁺ Ion Implantation

^○（D）Motoki Satoh¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kentarou Sawano², Yasuhiro Shiraki² (CCST Univ. of Yamanashi¹, ARL Tokyo City Univ.²)

[28p-PA2-3] Dependence of deposition rate on characteristics of Ge quantum dots grown on Si (001) substrate

^○（M2）Kazuhiro Gotoh^1,2, Ryuji Oshima², Takeyoshi Sugaya², Isao Sakata², Koji Matsubara², Michio Kondo^1,2 (Tokyo Tech¹, AIST²)

[28p-PA2-4] Investigations on growths and defect generation processes in silicon-carbon alloys grown using gas-source MBE

^○Hiroshi Furukawa¹, Shoichiro Sakai¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Yusuke Hoshi², Noritaka Usami² (CCST Univ. of Yamanashi¹, IMR Tohoku Univ.²)