[29a-B4-1~11] 5.1 Semiconductor laser, Light emitter / Photodetector

Fri. Mar 29, 2013 10:00 AM - 1:00 PM B4 (K2 3F-1308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29a-B4-1] ▲Silica High-Mesa Waveguide for Infrared Sensing

^○Jiao Chen¹, Hirohito Hokazono¹, Daisuke Nakashima¹, Kiichi Hamamoto¹ (Kyushu Univ.¹)

[29a-B4-2] Fabrication and Evaluation of Far infrared Detectors using Low Compensation Ratio GaAs Grown by LPE.

^○Tomokazu Nishimoto¹, Yoshihito Yokoyama², Hiroshi Murakami³, Osamu Abe¹, Moriaki Wakaki² (Jasco¹, Tokai Univ.², ISAS/JAXA³)

[29a-B4-3] Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates

^○Kohei Miura^1,2, Yasuhiro Iguchi¹, Yuuichi Kawamura², Junpei Murooka³, Haruyoshi Katayama³, Shota Kanno⁴, Tomoko Takekawa⁴, Masafumi Kimata⁴ (Sumitomo Electric Industries, Ltd.¹, Osaka Prefecture Univ.², Japan Aerospace Exploration Agency³, Ritsumeikan Univ.⁴)

[29a-B4-4] Detection Wavelength Control of Quantum Dot Infrared Photodetectors by Designing the Structure of Strain Reducing Layer

^○Sota Kagami^1,2, Yuichi Igarashi^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corp.¹, NanoQuine², IIS the Univ. of Tokyo³)

[29a-B4-5] Detection wavelength control of a quantum dot infrared photodetector by RTA

^○Yuichi Igarashi^1,2, Sota Kagami^1,2, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corp.¹, NanoQuine², IIS the Univ. of Tokyo³)

[29a-B4-5.1] Break(15min)

[29a-B4-6] Monolithic Integration of InP-Based Waveguide Photodiodes with MIM Capacitors for Compact Coherent Receiver

^○Ryuji Masuyama¹, Hideki Yagi¹, Naoko Inoue¹, Yutaka Onishi¹, Tomokazu Katsuyama¹, Takehiko Kikuchi¹, Yoshihiro Yoneda¹, Hajime Shoji¹ (Sumitomo Electric Industries, LTD.¹)

[29a-B4-7] Low-temperature fabrication of plastic-substrate dye-sensitized solar cells with a TiO2 protective layer

^○Takuma Yasufuku¹, Kosuke Ezaka², Yuki Onishi², Tomoyuki Yamamura², Tetsuo Soga^1,2, Naoki Kishi^1,2 (Dept. of Electrical and Electronic Engineering, Nagoya Inst. of Tech.¹, Dept. of Frontier Materials Graduate School of Engineering, Nagoya Inst. of Tech.²)

[29a-B4-8] Study on the applicability to the vertical cavity surface emitting laser of quantum well intermixing using spin-on-glass

^○Tomohiro Akutsu¹, Takuya Ushio¹, Akihiro Matsutani¹, Tomoyuki Miyamoto¹ (Tokyo Inst. of Technology¹)

[29a-B4-9] ▲Design and Fabrication of InGaAs Quantum Well Circular-Grating-Coupled Surface Emitting Laser

Ashim Saha¹, Takashi Sumitani¹, ^○Masahiro Uemukai¹, Toshiaki Suhara¹ (Osaka Univ.¹)

[29a-B4-10] △Dependence of Laser Characteristics on the Mesa Width of the Asymmetric Ridge Type Semiconductor Laser with a Partial Single Antiguiding Cladding Layer

^○（M1）Masahiro Higaki¹, Takahiro Numai¹ (Grad. School of Sci. & Eng., Ritsumeikan Univ.¹)

[29a-B4-11] Dependence of Laser Characteristics on the Mesa Width of the Ridge-type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis

^○Jun Fukuya¹, Takahiro Numai¹ (Grad. School of Sci. & Eng., Ritsumeikan Univ.,¹)

Session information

[29a-B4-1~11] 5.1 Semiconductor laser, Light emitter / Photodetector