[29p-G12-1~21] 17.1 Growth technology

Fri. Mar 29, 2013 1:00 PM - 6:30 PM G12 (B5 2F-2206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-G12-1] Synthesis of Graphene from Carbon-Metal Hybrid films

^○Hisayoshi Oshima¹, Kenji Okeyui¹, Yasushi Kouno¹, Kunihiro Onoda¹, Hiroki Hibino² (DENSO CO. Research Labs.¹, NTT Basic Research Labs.²)

[29p-G12-2] Fabrication of Highly Oriented Graphite Crystal Film by Resin Coating Method

^○Tetsuro Hirasaki¹, Hitoshi Ue¹, Hiroshi Fujioka², Masaya Kodama³ (Tokai Carbon¹, Tokyo Univ², AIST³)

[29p-G12-3] △Synthesis of Graphene Nanoribbons from Amyloid Template on Sapphire Substrate

^○Tianchen Dong^1,2, Ryuichi Ueki^1,2, Yuya Kajiwara^1,2, Eisuke Takai², Kai Ohashi², Kentarou Shiraki², Katsuhisa Murakami^1,2, Jun-ichi Fujita^1,2 (Tsukuba Research Center for Interdisciplinary Materials Science¹, Univ. Tsukuba Institute of Applied Physics²)

[29p-G12-4] △Graphene Production by Electrochemical Exfoliation with Square Pulse

^○（M1）Emi Kano^1,2, Soutaro Akiyama¹, Jie Tang^1,3, Masaki Takeguchi³, Katsuhisa Murakami^1,2, Junichi Fujita^1,2 (Univ. Tsukuba¹, TIMS², NIMS³)

[29p-G12-5] First-principles study of edge-modified armchair graphene nanoribbons

^○Hideyuki Jippo¹, Mari Ohfuchi¹ (Fujitsu Labs. Ltd.¹)

[29p-G12-6] Growth of graphene on a Palladium foil from graphene oxide

^○Sho Kato¹, Seiji Obata¹, Koichiro Saiki¹ (Grad. Sch. of Frontier Sciences, The Univ. of Tokyo¹)

[29p-G12-7] Doping of Nitrogen Atoms into Graphene from Iron Phthalocyanine

^○Hiroto Yamada¹, Koichiro Saiki¹, Seiji Obata¹ (Tokyo Univ.¹)

[29p-G12-8] Preparation and characterization of carbon nanotube-graphene hybrid structures

^○Taro Kusumoto¹, Hiraaki Kokame¹, Kazuki Fujimoto¹, Ryota Negishi¹, Yoshihiro Kobayashi¹ (Osaka Univ.¹)

[29p-G12-9] Repair of Defects in Graphene Oxide by Solution Process

^○Hiroshige Tanaka¹, Seiji Obata², Koichiro Saiki^1,2 (The Univ. of Tokyo¹, The Univ. of Tokyo²)

[29p-G12-10] Growth of graphene from GO on various faces of Cu single crystal

^○Seiji Obata¹, Hiroshige Tanaka², Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

[29p-G12-11] △Direct Graphene Growth on SiO2 Substrate

^○Takashi Ikuta¹, Kenta Gumi¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Kouichi Inoue¹, Kazuhiko Matsumoto¹ (ISIR, Osaka Univ.¹)

[29p-G12-11.1] Break(15min)

[29p-G12-12] Direct graphene growth on insulating substrates using metal catalyst overcoated with a SOG layer

^○Toshiyuki Takami¹, Ryosuke Seino¹, Toshio Ogino¹ (Yokohama Nat. Univ.¹)

[29p-G12-13] Ripple Structure of Graphene on Ru(0001) Surface

^○（P）Yuya Murata¹, Satoru Suzuki¹, Fumihiko Maeda¹, Hiroki Hibino¹ (NTT Basic Research Labs.¹)

[29p-G12-14] ▼Growth and Characterization of Monolayer Hexagonal Boron Nitride on Cobalt

^○Carlo Orofeo¹, Satoru Suzuki¹, Hiroyuki Kageshima¹, Hiroki Hibino¹ (NTT Basic Research Labs.¹)

[29p-G12-15] △Texture synthesis of graphene towards graphene-graphene heterostructure devices

^○（M1）Yuki Anno¹, Seiji Akita¹, Takayuki Arie¹ (Osaka Pref. Univ.¹)

[29p-G12-16] Characterization of graphene growth at substrate/metal catalyst interface by Raman spectroscopy

^○Ryosuke Seino¹, Toshiyuki Takami¹, Toshio Ogino¹ (Yokohama Nat. Univ.¹)

[29p-G12-17] Graphene Growth on Co/Si(111) substrates by Pulse Arc Plasma Deposition

^○Masaya Mizuno¹, Kazuya Banno¹, Kazuhisa Fujita¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

[29p-G12-18] ▼Large Area Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Graphene on Insulating Substrates

^○Marek Schmidt¹, Cigang Xu², Mike Cook², Hiroshi Mizuta^1,3, Harold Chong³ (JAIST¹, Oxford Instruments², Univ. of Southampton³)

[29p-G12-19] Single Crystal Graphene by Micro Wave Surface Wave Plasma CVD

^○Masayoshi Umeno¹, Koichi Wakita², Hideo Uchida³, Hare Ram Aryal¹ (Chubu Univ.¹, Chubu Univ.², Chubu Univ.³)

[29p-G12-20] Thickness Dependence of Cu Foil on Roll-to-Roll Synthesis of Graphene by MWPCVD

^○Takatoshi Yamada^1,2, Ryuichi Kato², Nayuta Shimada², Kazuteru Uekusa², Massatou Ishihara^1,2, Masataa Hasegawa^1,2 (AIST¹, TASC²)

[29p-G12-21] Plasma CVD using He for Graphene

^○Kazuo Tsugawa¹, Ryuichi Kato¹, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (TASC¹, AIST²)

Session information

[29p-G12-1~21] 17.1 Growth technology