The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

08. Plasma Electronics » 8.4 Plasma etching

[27p-A3-1~17] 8.4 Plasma etching

Wed. Mar 27, 2013 1:30 PM - 6:00 PM A3 (K1 2F-201)

[27p-A3-14] △Mechanism of Highly Selective and Damage-Free SiN Etching Using Neutral Beam

Daiki Nakayama1, Akira Wada1, Tomohiro Kubota1, Seiji Samukawa1,2 (IFS, Tohoku Univ.1, WPI-AIMR, Tohoku Univ.2)

Keywords:中性粒子ビーム、窒化シリコンエッチング、フロロカーボンプラズマ