[27p-A6-1~16] 6.2 Carbon-based thin films

[27p-A6-10] △400℃ operation of hydrogen-terminated diamond MOSFETs with Al₂O₃ passivation

^○Hidetoshi Tsuboi¹, Tomoya Naruo¹, Akira Daicho¹, Tatsuya Saito¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Keywords:ダイヤモンド、水素終端、MOSFET