[27p-A6-1~16] 6.2 Carbon-based thin films

[27p-A6-8] Operation mechanism of heat-resistive NO₂-adsorbed H-terminated diamond FETs stabilized by Al₂O₃ passivation

^○Kazuyuki Hirama¹, Hisashi Sato¹, Yuichi Harada¹, Hideki Yamamoto¹, Makoto Kasu^1,2 (NTT Basic Research Lab.¹, Saga Univ.²)

Keywords:ダイヤモンド、電界効果トランジスタ、Al2O3