[27p-F2-1~15] 6.3 Oxide-based electronics

[27p-F2-15] Resistive Switching Properties of SiO_x/TiO₂ Multi-Stack in Ti-electrode MIM Diodes

^○（M2）Motoki Fukusima¹, Akio Ohta², Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

Keywords:抵抗変化メモリ、シリコンリッチ酸化膜