[27p-PB5-1~13] 13.6 Silicon devices / Integration technology

[27p-PB5-2] ▼Drain-Current Fluctuation during Dynamic Gate Bias in Si MOSFETs due to Random Telegraph Noise

^○Wei Feng^1,2, Keisaku Yamada^1,2, Kenji Ohmori^1,2 (University of Tsukuba¹, JST-CREST²)

Keywords:Random Telegraph Noise、dynamic fluctuation、MOSFET