[27p-PB5-1~13] 13.6 Siデバイス／集積化技術

[27p-PB5-2] ▼Drain-Current Fluctuation during Dynamic Gate Bias in Si MOSFETs due to Random Telegraph Noise (1:30 PM ～ 3:30 PM)

^○馮ウェイ^1,2，山田啓作^1,2，大毛利健治^1,2 (筑波大¹，JST-CREST²)

キーワード：Random Telegraph Noise、dynamic fluctuation、MOSFET