[28a-A3-1~9] 16.1 Fundamental properties and their evaluation in disordered materials

[28a-A3-9] Low Temperature Formation of Crystalline Si/Ge Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation

^○（M1）Yimin Lu¹, Jin Gao¹, Katsunori Makihara¹, Kouhei Sakaike², Yuji Fujita², Mitsuhisa Ikeda², Akio Ohta², Seiichiro Higashi², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

Keywords:半導体