△Characterization of Electrical Properties and Hetero-MOS interface states of AlGaN/GaN MOS HEMTs

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 10:00 AM - 12:30 PM G11 (B5 2F-2205)

^○Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

Keywords:AlGaN、MOS、界面