[28a-G2-1~12] 13.3 Insulator technology

[28a-G2-1] △Improvement of SiO₂ using nitric acid oxidation of silicon (NAOS) method : application of permanent saving memory

^○tomoki akai¹, taketoshi matsumoto¹, shigeki imai¹, hikaru kobayashi¹ (ISIR, Osaka Univ.¹)

Keywords:二酸化シリコン、保護膜