[28a-G21-1~11] 15.4 III-V-group nitride crystals

[28a-G21-2] Synchrotron X-ray crystallinity evaluation of GaN single-crystal wafers grown by Na flux method

^○Mayu Shimoda¹, Saki Sawada¹, Takahiro Onoue¹, Kazuki Hazama¹, Yoshiyuki Tsusaka¹, Hidekazu Takano¹, Yasushi Kagoshima¹, Soichi Nose², Shingo Takeda², Mamoru Imade³, Kazusi Yokoyama², Junji Matsui², Mihoko Maruyama³, Masashi Yoshimura³, Yusuke Mori³ (Univ. of Hyogo¹, Hyogo Synchrotron Radiation Nanotechnology Lab.², Osaka Univ.³)

Keywords:GaN、Naフラックス法