[28a-G6-1~11] 13.5 Si process technology

[28a-G6-1] Characterization of Structure and Growth of Tungsten-Based Pillars Deposited by Helium Ion Microscope and Beam-Induced Substrate Damages

^○Kazuyuki Kohama^1,2, Tomohiko Iijima¹, Misa Hayashida¹, Shinichi Ogawa¹ (AIST¹, JSPS²)

Keywords:HIM、ブリスタリング、エッチング