Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs with a High-k Passivation Layer

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

^○Hideyuki Hanawa¹, Atsushi Nakajima¹, Kazushige Horio¹ (Shibaura Inst. Tech.¹)

Keywords:GaN、HEMT、耐圧