The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

[28p-G11-17] Influence of InAlN Spacer on Electrical Properties of AlGaN/GaN Heterostructure

○Kentaro Mori1, Arata Watanabe1, tatsuya Ito1, Takashi Egawa1 (Nagoya Inst.of Tech.1)

Keywords:InAlNスペーサ