[28p-G20-1~16] Recent status for fabrication and characterization of semiconductor quantum dots

[28p-G20-7] Liquid Gated Quantum Dot Electric-Double-Layer Transistors

^○Kenji Shibata^1,2, Hongtao Yuan³, Yoshihiro Iwasa^3,4, Kazuhiko Hirakawa^1,2,5 (INQIE, Univ. of Tokyo¹, IIS, Univ. of Tokyo², Dept. Appl. Phys., Univ. of Tokyo³, CERG Riken⁴, CREST-JST⁵)

Keywords:InAs量子ドット、トランジスタ、電気二重層