[28p-G21-1~12] 15.4 III-V-group nitride crystals

[28p-G21-5] Technical trial into higher crystalline quality of GaN films grown on Si substrates by ECR-MBE under reduced plasma damage -reconsideration of growth process and examination-

^○Tokuo Yodo¹, Naoya Inoue², Daishi Shiojiri², Gohon Tan², Noriko Kumagai², Akifumi Matsuda², Mamoru Yoshimoto² (Osaka Institute of Technology¹, Tokyo Institute of Technology²)

Keywords:Si基板上GaN