[28p-G22-1~19] 15.6 IV-group-based compounds

[28p-G22-17] △Identification of Origin of Z_1/2 Center in 4H-SiC by DLTS and EPR

^○Koutarou Kawahara¹, T.Nguyen Son², Jun Suda¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹, Linkoping Univ.²)

Keywords:炭素空孔、深い準位、電子線照射