The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[28p-G8-1~14] 13.2 Semiconductor surfaces

Thu. Mar 28, 2013 1:00 PM - 4:45 PM G8 (B5 2F-2202)

[28p-G8-3] △Fabrication and analysis of sulfur-terminated Ge(111) surface

○Yoshikazu Hanabusa1, Hitoshi Suzuki1, Takayuki Takahagi1, Hiroyuki Sakaue1 (Hiroshima Univ.1)

Keywords:Ge表面、硫黄終端