[28p-PA1-1~34] 15.4 III-V-group nitride crystals

[28p-PA1-27] RF-MBE growth of cubic AlN and high-Al-content cubic AlGaN films

^○Masahiro Kakuda¹, Sei Morikawa¹, Shigeyuki Kuboya¹, Ryuji Katayama², Hiroyuki Yaguchi³, Kentaro Onabe¹ (The Univ. of Tokyo¹, Tohoku Univ.², Saitama Univ.³)

Keywords:窒化物半導体