[29a-G9-1~11] 13.6 Silicon devices / Integration technology

[29a-G9-6] ▼Ab initio study of binding energy for single phosphorus donor in silicon nano stub-shaped channel

^○Le The Anh¹, Yohei Kuzuya², Daniel Moraru², Takeshi Mizuno², Manoharan Muruganathan¹, Michiharu Tabe², Hiroshi Mizuta^1,3 (JAIST¹, Shizuoka Univ.², Univ. of Southampton³)

Keywords:状態密度、単一ドーパント、第一原理計シミュレーション