[29a-G9-1~11] 13.6 Siデバイス／集積化技術

[29a-G9-7] ▼Influence of deep energy dopants on the electronic potential distribution of two-dimensional pn junctions measured by Kelvin probe force microscope (11:30 AM ～ 11:45 AM)

^○Roland Nowak^1,2，ダニエル モラル¹，水野武志¹，Ryszard Jablonski²，田部道晴¹ (静大電研¹，ワルシャワ大²)

キーワード：KFM、pn junction、silicon-on-insulator