[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

[29a-PB7-6] PL properties dependent on the height of GaAs nanodisks fabricated by neutral beam etching

^○Toshiyuki Kaizu^1,5, Yosuke Tamura^3,5, Makoto Igarashi^3,5, Thomas Cedric^3,5, Hu Weiguo^3,5, Seiji Samukawa^3,4,5, Yoshitaka Okada^2,5 (Faculty of Eng., Kobe Univ.¹, RCAST, The Univ. of Tokyo², IFS, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴, JST-CREST⁵)

Keywords:ナノディスク、中性粒子ビームエッチング、MBE再成長