[29p-F1-1~17] 6.4 薄膜新材料

[29p-F1-5] ▼New Passivation Material for a-IGZO thin film transistor (3:15 PM ～ 3:30 PM)

^○（D）Juan-Paolo Bermundo¹, Yasuaki Ishikawa¹, Haruka Yamazaki¹, Toshiaki Nonaka², Yukiharu Uraoka¹ (Nara Institute of Science and Technology¹, AZ Electronic Materials Manufacturing Japan K.K.²)

キーワード：Passivation, silsesquioxane, a-IGZO reliability