[29p-F1-1~17] 6.4 薄膜新材料

[29p-F1-6] ▼Growth of Morphology-Controlled Ga₂O₃ Nanowires by High Temperature Glancing Angle Deposition (3:30 PM ～ 3:45 PM)

^○Haruhiko Minamitake¹, Motofumi Suzuki¹, Kaoru Nakajima¹, Kenji Kimura¹, Chia-Wei Hsu², Li-Jen Chou² (Kyoto Univ.¹, National Tsing-Hua Univ.²)

キーワード：nanowire、Ga2O3、HT-GLAD