The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[29p-F2-1~19] 6.3 Oxide-based electronics

Fri. Mar 29, 2013 2:00 PM - 7:00 PM F2 (E3 3F-303)

[29p-F2-1] △Physical properties of indium oxynitride (InOxNy) epitaxial thin films

Sohei Okazaki1,2, Yasushi Hirose1,2,3, Shoichiro Nakao1,2, Chang Yang1,2,3, Atsushi Suzuki1,2,3, Daichi Oka1,2,3, Tetsuya Hasegawa1,2,3 (KAST1, JST-CREST2, Univ. of Tokyo3)

Keywords:酸窒化物、透明導電体