[29p-G10-1~18] 17.3 Exploration of new functions and evaluation of basic properties

[29p-G10-3] △Write and Erase Characteristics of Non-suspended and Suspended Graphene ReRAM

^○（M1）Aya Shindome^1,2, Nobuyasu Beppu^1,2, Tsunaki Takahashi^1,2, Shunri Oda³, Ken Uchida^1,2 (Dept. Phys. Elec., Tokyo Institute of Technology¹, Keio University², QNERC, Tokyo Institute of Technology³)

Keywords:グラフェン、抵抗変化型メモリ