[29p-G20-3~20] 15.3 III-V族エピタキシャル結晶

[29p-G20-12] Corrugated surface grown on GaAs (631)A- and (631)B-oriented substrates (4:00 PM ～ 4:15 PM)

David Vazquez-Cortez¹，Victor Hugo Menez-Garcia²，Maximo Lopez-Lopez³，^○下村哲¹ (愛媛大・院理工¹，サンルイスポトシ大²，CINVESTAV-IPN³)

キーワード：GaAs、corrugation