The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

[29p-G20-20] Selective growth of GaN by RF-radical source MBE

Hironao Kato1, Takenori Iwatsuki1, Nao Yamamoto1, Yuya Shirai1, Yujiro Hirota1, Hiromu iha1, Shigeya Naritsuka1, Takahiro Maruyama1 (Meijo Univ1)

Keywords:選択成長