[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

[29p-G20-7] Growth of the carbon doped InGaAs layer using the ethyl-based organic material by the MOCVD method

^○Hideo Yokohama^1,2, Kenji Shiojima¹, Gako Araki² (Unv. of Fukui¹, Optrans Corp.²)

Keywords:MOCVD、C-doped InGaAs