[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-3] Fundamental sturdy on Be-ion implanted GaN grown on a GaN free-standing substrate

^○Yuya Ishida¹, Takuya Oikawa¹, Kazuki Nomoto², Naoki Kaneda³, Tadatoshi Tsuchiya³, Tomoyoshi Mishima³, Tohru Nakamura¹ (Hosei University¹, University of Notre Dame², Hitachi Cable Ltd.³)

Keywords:GaN、Be