[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-19] Application of Cu electrode to SiC-MOSFET

^○Hiroaki Okabe¹, Motoru Yoshida¹, Takaaki Tominaga¹, Jun Fujita¹, Kazuyo Endo¹, Yoshinori Yokoyama¹, Kazuyasu Nishikawa¹, Yoshihiko Toyoda¹, Satoshi Yamakawa¹ (Mitsubishi Electric Corporation¹)

Keywords:SiC、MOSFET、電極