[30a-F2-1~10] 6.3 Oxide-based electronics

[30a-F2-3] ReRAM switching properties and in-situ TEM observation of MoOx thin films

^○Masaki Kudo¹, Yuuki Ohno¹, Keisuke Takamizawa¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Hokkaido Univ.¹)

Keywords:透過型電子顕微鏡、抵抗変化型メモリ、TEMその場観察