△Carriers recombination dynamics in InGaN/GaN quantum wells studied by microscopic photoluminescence under de-excitation source

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Mar 30, 2013 1:15 PM - 3:00 PM G21 (B5 4F-2405)

^○Yuuya Tanaka¹, Akio Kaneta¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

Keywords:InGaN