[17a-A27-1~11] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 9:00 AM - 12:00 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-A27-1] Formation of Electrode for GaN-based Blue Light-emitting Diode by Screen Printing of Ag nanoparticle inks.

^○Tasuku Shigemune¹, Atsushi Koizumi¹, Yukiyasu Kashiwagi², Hiroshi Kakiuchi³, Yasutaka Takemura⁴, Mari Yamamoto², Masashi Saitoh², Masanari Takahashi², Toshinobu Ohno², Masami Nakamoto², Nobuyoshi Aoyagi³, Yukio Yoshida³, Kouichiro Murahashi⁴, Kuniaki Otsuka⁴, Yasuffumi Fujiwara¹ (Osaka Univ.¹, Osaka Municipal Tech Res Inst.², Daiken Chemical Co.,Ltd.³, Okuno Chemical Industries Co.,Ltd.⁴)

9:15 AM - 9:30 AM

[17a-A27-2] Study about the reaction during anodization of InP

^○(M1C)Taihei Iwasaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri & Tech¹)

9:30 AM - 9:45 AM

[17a-A27-3] ReRAM behavior of a double-sided anodic porous alumina

^○(M1)Hiroto Ogawa¹, Yoshitaka Morishita¹, Takaya Hosono¹ (Tokyo Univ. of Agri & Tech¹)

9:45 AM - 10:00 AM

△ [17a-A27-4] In-situ cross-sectional observation of operated SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

^○Norimichi Chinone¹, Yasuo Cho¹ (Tohoku Univ.¹)

10:00 AM - 10:15 AM

△ [17a-A27-5] Impact of Gate Delay Time in InGaAs-HEMTs Operated in a Class-F Amplifier

^○Tomohiro Yoshida¹, Masashi Oyama², Kunihiko Watanabe², Yohtaro Umeda², Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹, Tokyo University of Science²)

10:15 AM - 10:30 AM

[17a-A27-6] Analysis of influence of threading dislocation on device characteristics of InSb HEMT

^○Shota Hatsushiba¹, Shohei Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe^1,2, Akifumi Kasamatsu², Hiroki Fujishiro^1,2 (TUS¹, NICT²)

Break 10:30～10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [17a-A27-7] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

^○(M2)Kazumi Ohashi¹, Motohiko Fujimatsu¹, Yauyuki Miyamoto¹ (Tokyo Tech.¹)

11:00 AM - 11:15 AM

[17a-A27-8] Highly Sensitive Planar-Doped GaAsSb-based Backward Diodes at 170 GHz

^○Tsuyoshi Takahashi^1,2, Masaru Sato^1,2, Yasuhiro Nakasha^1,2, Shoichi Shiba^1,2, Naoki Hara^1,2, Taisuke Iwai² (Fujitsu¹, Fujitsu Labs.²)

11:15 AM - 11:30 AM

[17a-A27-9] Preliminary study on the fabrication of transferred-substrate InP HBTs using surface activated bonding

^○Yuta Shiratori¹, Norihide Kashio¹, Kenji Kurishima¹, Takuya Hoshi¹, Eiji Higurashi², Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹, Univ. of Tokyo²)

11:30 AM - 11:45 AM

△ [17a-A27-10] CBr₄ flow modulation for forming compositionally-graded InGaAsSb base of InP-based DHBTs

^○(D)Takuya Hoshi^1,3, Norihide Kashio¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹, Hideki Gotoh^2,3 (NTT Photonics Labs.¹, NTT Basic Research Labs.², Univ. Tsukuba³)

11:45 AM - 12:00 PM

[17a-A27-11] High-Current-Gain InP/InGaAs DHBT with f_t and f_max of over 450 GHz

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Photonics Lab.¹)