Oral presentation

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[17p-A8-1~17] 6.2 Carbon-based thin films

Wed. Sep 17, 2014 1:15 PM - 6:00 PM A8 (E207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[17p-A8-1] Crystal Curvature of HPHT Diamond Single Crystals Measured by Synchrotron Radiation Monochromatic X-ray Topography

^○Makoto Kasu¹, Ryuichi Murakami¹, Satoshi Masuya¹, Kazuya Harada¹, Hotoshi Sumiya² (Saga Univ.¹, Sumitomo Electric.²)

1:30 PM - 1:45 PM

[17p-A8-2] X-ray topography study of diamond p+ (100) substrates

^○Shinya Ohmagari¹, Yukako Kato¹, Hitoshi Umezawa¹, Shin-ichi Shikata¹ (AIST Diamond Gr.¹)

1:45 PM - 2:00 PM

△ [17p-A8-3] Analysis of superconducting boron-doped diamond thin film using X-ray diffraction

^○Masanobu Shibata¹, Taisuke Kageura¹, Mitsuyasu Koga¹, Takahide Yamaguchi², Yoshihiko Takano², Hiroshi Kawarada¹ (Waseda Univ.¹, NIMS²)

2:00 PM - 2:15 PM

[17p-A8-4] Phase-contrast Microscopic Analysis of Defects in Diamond Epitaxial layer

^○Yukako Kato¹, Hitoshi Umezawa¹, Shin-ichi Shikata¹ (AIST¹)

2:15 PM - 2:30 PM

△ [17p-A8-5] Perfect selective alignment of NV center in diamond

^○(M2)Takahiro Fukui¹, Yuuki Doi¹, Takehide Miyazaki², Yoshiyuki Miyamoto², Hiromitsu Katou^2,3, Tsubasa Matsumoto^2,3, Toshiharu Makino^2,3, Satoshi Yamasaki^2,3, Ryuusuke Morimoto⁴, Norio Tokuda⁴, Mutsuko Hatano^3,5, Yuuki Sakagawa¹, Hiroki Morishita^1,3, Toshiyuki Tashima^1,3, Shinji Miwa^1,3, Yoshishige Suzuki^1,3, Norikazu Mizuochi^1,3 (Osaka Univ.¹, AIST², CREST³, Kanazawa Univ.⁴, Tokyo Tech.⁵)

2:30 PM - 2:45 PM

[17p-A8-6] Evaluation of the Yield for Silicon-Vacancy Center Formation by Low-energy Silicon Ion Implantation into Diamond

^○(M2)Syuto Tamura¹, Godai Koike¹, Takashi Tanii¹, Tokuyuki Teraji², Shinobu Onoda³, Takeshi Ohshima³, Fedor Jelezko⁴, E Wu⁵, Takahiro Shinada⁶, Junichi Isoya⁷, Liam P. McGuinness⁴, Lachlan Rogers⁴, Christoph Müller⁴, Boris Naydenov⁴, Liu Yan⁵ (Waseda Univ.¹, NIMS², JAEA³, Ulm Univ.⁴, ECNU⁵, AIST⁶, Univ. of Tsukuba⁷)

Break 14:45～15:00 (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

[17p-A8-7] Temperature-dependent efficiency of phosphorus incorporation in MPCVD diamond

^○(PC)Takashi Yamamoto¹, Satoshi Koizumi¹ (NIMS¹)

3:15 PM - 3:30 PM

[17p-A8-8] X-ray photoelectron spectroscopy analysis of phosphorus-doped diamond films grown on misoriented (001) substrate

^○(D)Hiroyuki Kawashima^1,2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^1,2,3 (Univ. of Tsukuba¹, AIST², JST/CREST³)

3:30 PM - 3:45 PM

[17p-A8-9] Reduction of contact resistance by planarization of n-type diamond surface

^○(P)Tsubasa Matsumoto^1,2,3, Hiroyuki Kawashima^1,2,4, Hiromitsu Kato^1,2, Daisuke Takeuchi^1,2, Satoshi Yamasaki^1,2,4 (AIST¹, CREST², Innovation school³, Univ. of Tsukuba⁴)

3:45 PM - 4:00 PM

[17p-A8-10] Currents and Emissions of Narrow-gap Contacts on Phosphorus-doped n-type Diamond

^○Yuki Kudo^1,2, Daisuke Takeuchi^1,2, Hiromitsu Kato^1,2, Toshiharu Makino^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (AIST¹, CREST(JST)², Univ. of Tsukuba³)

4:00 PM - 4:15 PM

△ [17p-A8-11] Fabrication of Lateral p-n Junction on a (111) Substrate

^○Kazuki Sato¹, Takayuki Iwasaki^1,2,3, Maki Shikizu^1,3, Hiromitsu Kato^3,4, Toshiharu Makino^3,4, Masahiko Ogura^3,4, Daisuke Takeuchi^3,4, Satoshi Yamasaki^3,4, Mutsuko Hatano^1,2,3 (Tokyo Institute of Technology¹, ALCA², CREST³, AIST⁴)

4:15 PM - 4:30 PM

[17p-A8-12] Temperature dependence of deep ultraviolet emission in diamond light emitting diodes

^○Daisuke Kuwabara^1,2,3, Toshiharu Makino^2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^2,3 (Univ. of Tsukuba¹, ETRI, AIST², CREST/JST³)

Break 16:30～16:45 (4:30 PM - 4:45 PM)

4:45 PM - 5:00 PM

△ [17p-A8-13] Recovered surface conduction under partially oxidized (111)diamond surface after vacuum annealing

^○Yuya Hayashi¹, Takeshi Hara¹, Yuji Seshimo¹, Tomohiro Hakamata¹, Wako Ono¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

5:00 PM - 5:15 PM

[17p-A8-14] Isotope analysis of diamond-surface passivation effect of H2O-grown ALD-Al2O3 films

^○Atsushi Hiraiwa¹, Tatsuya Saito², Akira Daicho², Hiroshi Kawarada² (Waseda Univ., INN¹, Waseda Univ., Fac. Sci. Eng.²)

5:15 PM - 5:30 PM

△ [17p-A8-15] Electric property of diamond surface covered by MBE grown SiO2

^○Takeshi Hara¹, Tomohiro Hakamata¹, Wako Ono¹, Yuji Seshimo¹, Yuya Hayasi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

5:30 PM - 5:45 PM

△ [17p-A8-16] Ohmic contact formation to p-type (111) diamond by post wet annealing

^○Takuma Minamiyama¹, Daisuke Miyata¹, Tatsuma Chonan¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST,CREST³)

5:45 PM - 6:00 PM

[17p-A8-17] Microstructure and electric properties of AlN/diamond (111) heterostructure

^○Masataka Imura¹, Jiangwei Liu¹, Liao Meiyong¹, Yasuo Koide¹, Takao Matsumoto², Naoya Shibata², Yuuichi Ikuhara² (NIMS¹, The Univ. of Tokyo²)