Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:45 PM

[17p-C5-1] [Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom

^○Shizuo Fujita (Kyoto University)

1:45 PM - 2:00 PM

[17p-C5-2] Microscopic crystalline morphology of semipolar (20-21) GaN on (22-43) Patterned Sapphire Substrate

^○(M2)Takuji Arauchi¹, Shotaro Takeuchi¹, Yasuhiro Hashimoto², Yoshiaki Nakamura¹, Yasuhiko Imai³, Keisuke Yamane², Narihito Okada², Shigeru Kimura³, Kazuyuki Tadatomo², Akira Sakai¹ (Osaka Univ¹, Yamaguchi Univ², JASRI/SPring-8³)

2:00 PM - 2:15 PM

[17p-C5-3] Thickness and Growth condition Dependence of Crystallinity in Semipolar (20-21) GaN Films by X-ray Diffraction

^○(M1)Toshiro Uchiyama¹, Shotaro Takeuchi¹, Takuji Arauchi¹, Yasuhiro Hashimoto², Yoshiaki Nakamura¹, Keisuke Yamane², Narihito Okada², Kazuyuki Tadatomo², Akira Sakai¹ (Osaka Univ.¹, Yamaguchi Univ.²)

2:15 PM - 2:30 PM

[17p-C5-4] Synchrotron X-ray crystallinity evaluation of GaN single-crystal wafers grown by Na flux method

^○(M2)Shuhei Fukuda¹, Yoshiyuki Tsusaka¹, Hidekazu Takano¹, Yasushi Kagoshima¹, Soichi Nose², Shingo Takeda², Kazushi Yokoyama², Junji Matsui², Masayuki Imanishi³, Yuma Todoroki³, Mihoko Maruyama³, Mamoru Imade³, Masashi Yoshimura³, Yusuke Mori³ (Univ. of Hyogo¹, Hyogo Synchrotron Radiation Nanotechnology Lab.², Osaka Univ.³)

2:30 PM - 2:45 PM

[17p-C5-5] Impact of crystalline quarity of GaN template on GaN substrate by hydride vapor phase epitaxy

^○Takuya Egami¹, Takeshi Yamamoto¹, Takashi Inagaki¹, Norihiro Itagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

2:45 PM - 3:00 PM

[17p-C5-6] Comparison of crystalline qualities in semipolar {20-21} GaN and {20-2-1} GaN grown by hydride vapor phase epitaxy

^○Yasuhiro Hashimoto¹, Takashi Inagaki¹, Kota Nakao¹, Keisuke Yamane², Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹, Toyohashi Univ. Tech.²)

Break 15:00～15:15 (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[17p-C5-7] Effect of temperature distribution on epitaxial GaN growth using Ga2O vapor

^○Hiroaki Takatsu¹, Yuki Taniyama¹, Masami Juta¹, Tomoaki Sumi¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka University¹, Itochu Plastics Inc.²)

3:30 PM - 3:45 PM

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga₂O vapor

^○Akira Kitamoto¹, Yuan Bu¹, Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ.¹, Itochu Plastics Inc.²)

3:45 PM - 4:00 PM

[17p-C5-9] Deterioration of Homoepitaxial HVPE-AlN Suface in a High Temperature Gas Atmosphere

^○Shunsuke Tojo¹, Ryohei Tanaka¹, Toshinari Nukaga¹, Rie Togashi¹, Toru Nagashima², Toru Kinoshita², Baxter Moody³, Hisashi Murakami¹, Ramon Collazo⁴, Yoshinao Kumagai¹, Zlatko Sitar^3,4 (Tokyo University of Agriculture and Technology¹, Tokuyama Corporation², HexaTech, Inc.³, North Carolina State Univ.⁴)

4:00 PM - 4:15 PM

△ [17p-C5-10] Synthesis of single-crystalline AlN nanowires by nitridation of multi-component melt

^○(M2)Mingyu Chen¹, Masashi Nagaya¹, Shota Watanabe¹, Yukihisa Takeuchi¹, Shunta Harada¹, Shigeo Arai², Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹, EcoTopia Institute²)

4:15 PM - 4:30 PM

△ [17p-C5-11] Determination of experimental condition using chemical equilibrium calculations in AlN solution growth

^○(M2)Masashi Nagaya¹, Mingyu Chen¹, Shota Watanabe¹, Yukihisa Takeuchi¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

Break 16:30～16:45 (4:30 PM - 4:45 PM)

4:45 PM - 5:15 PM

[17p-C5-12] [JSAP Paper Award Speech]（30min.）
Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices

^○Neeraj Nepal, Virginia D Wheeler, Travis J Anderson, Francis J Kub, Michael A Mastro, Rachael L Myers-Ward, Syed B Qadri, Jaime A Freitas, Sandra C Hernandez, Luke O Nyakiti, Scott G Walton, Kurt Gaskill, and Charles R Eddy, Jr. (U.S. Naval Research Laboratory)

5:15 PM - 5:30 PM

[17p-C5-13] High-Speed Growth of InN on Nitrided Yttria-Stabilized Zirconia (111) substrates Using a Two-Step Precursor Generation HVPE System

^○Chie Kojima¹, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Dept. of Appl. Chem., Tokyo Univ. of Agri. & Tech.¹)

5:30 PM - 5:45 PM

△ [17p-C5-14] Epitaxial growth of GaN thin films by reactive sputtering

^○Yuji Isosaki¹, Yuichiro Yamashita², Takashi Yagi², Junjun Jia¹, Naoyuki Taketoshi², Shinichi Nakamura¹, Yuzo Shigesato¹ (Aoyama Gakuin University¹, National Institute of Advanced Industrial Science and Technology²)

5:45 PM - 6:00 PM

[17p-C5-15] Influence of Sputtering Pressure on Surface Characteristics and Crystalline Quality of AlN Films Deposited by Pulsed DC Reactive Sputtering

^○(M1)Hiroto Takeuchi¹, Makoto Ohtsuka¹, Hiroyuki Fukuyama¹ (Tohoku Univ. IMRAM¹)

6:00 PM - 6:15 PM

[17p-C5-16] Growth of group III nitrides on hcp metals by pulsed sputtering deposition

^○Hyeryun Kim¹, Jitsuo Ohta¹, Ryuta Tanaka¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (The Univ. of Tokyo¹, JST-CREST²)

6:15 PM - 6:30 PM

[17p-C5-17] Growth of InN layer by UHV sputter epitaxy (Ⅱ)

^○(M2)Akiyori Tada¹, Yuki Kobashi¹, Susumu Fukui¹, Takeshi Koda¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

6:30 PM - 6:45 PM

[17p-C5-18] Growth of InN layer by UHV sputter epitaxy (III)

^○(M2)Susumu Fukui¹, Yuki Kobashi¹, Akiyori Tada¹, Takeshi Koda¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)