Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A24-1] Formation of AlN thin films by direct nitridation of Al thin films in NH3 and N2 gas

^○Shun Kajihara¹, Masato Hamasaki¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

9:15 AM - 9:30 AM

▲ [18a-A24-2] Growth and Characterization of Eu-Doped GaN by Low-Temperature Organometallic Vapor Phase Epitaxy

^○Wanxin ZHU¹, Timmerman Dolf¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

9:30 AM - 9:45 AM

△ [18a-A24-3] Formation of new Eu optical center by Zn,O-codoping in Eu-doped GaN

^○Masaaki Matsuda¹, Wanxin Zhu¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

9:45 AM - 10:00 AM

△ [18a-A24-4] Enhancement of Eu photoluminescence intensity in Eu-doped GaN by Localized Surface Plasmon Resonance

^○(M2)Tomohiro Inaba¹, Takanori Kojma¹, Atsusi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

10:00 AM - 10:15 AM

△ [18a-A24-5] Characterization of energy transfer efficiency in Eu-doped GaN by two-wavelength excited photoluminescence

^○Kohei Okada¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

10:15 AM - 10:30 AM

[18a-A24-6] Effects of Strain on Mutual Energy Transfer between Eu Luminescent Centers in Eu-Doped GaN Grown on Various Substrates

^○Atsushi Koizumi¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Kazuteru Tanaka¹, Takanori Kojima¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Break 10:30～10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-A24-7] Population transfer to higher states in Er2O3 thin films

^○Takehiko Tawara^1,2, Hiroo Omi^1,2, Adel Najar¹, Reina Kaji³, Satoru Adachi³, Hideki Gotoh¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaido Univ.³)

11:00 AM - 11:15 AM

[18a-A24-8] Energy transfer and nonradiative processes in (Er_xSc_1-x)₂O₃ thin films

^○Yoshihiro Kawakami¹, Reina Kaji¹, Satoru Adachi¹, Takehiko Tawara^2,3, Hiroo Omi^2,3 (Hokkaido Univ.¹, NTT Basic Research Labs.², NTT Nanophotonics Center³)

11:15 AM - 11:30 AM

[18a-A24-9] Phase relaxation properties of hyperfine sublevels in ¹⁶⁷Er³⁺ ions doped in an Y₂SiO₅ crystal

^○Daisuke Hashimoto¹, Kaoru Shimizu² (NTT BRL¹, NTT BRL²)

11:30 AM - 11:45 AM

▲ [18a-A24-10] Structural Characterization and Luminescence Properties of ErxSc2-xSi2O7 Prepared by RF Sputtering

^○Adel Najar¹, Hiroo Omi^1,2, Takehiko Tawara^1,2 (NTT BRL¹, NPC²)

11:45 AM - 12:00 PM

[18a-A24-11] Concentration dependence of occupation sites of Er³⁺ ions in (Er_1-xSc_x)₂O₃ films

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Satoru Adachi³, Hideki Gotoh¹ (NTT BRL¹, NTT NPC², Hokkaido Univ.³)

12:00 PM - 12:15 PM

[18a-A24-12] Photoluminescence from Eu²⁺ ions doped in sputter-deposited ZnO:Eu films

^○Housei Akazawa¹, Hiroyuki Shinojima² (NTT MI Labs.¹, Kurume NCT²)

12:15 PM - 12:30 PM

[18a-A24-13] Photoluminescence and local structure analysis of Nd-Al co-doped TiO₂ thin films

^○Yutaka Aizawa¹, Shuji Komuro², Norie Hirao³, Xinwei Zhao¹ (Tokyo Univ. of Science¹, Toyo Univ.², JAEA³)

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