[18a-A6-1~11] 9.2 Nanowires, nanoparticles

Thu. Sep 18, 2014 9:00 AM - 12:00 PM A6 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A6-1] [JSAP Young Scientist Award Speech]（15min.）
GaAs/InGaP Core–Multishell Nanowire-Array-Based Solar Cells

^○Eiji Nakai (Hokkaido University)

9:15 AM - 9:30 AM

[18a-A6-2] Self-catalyzed InP nanowire growth on patterned Si substrates

^○Kenichi Kawaguchi¹, Hisao Sudo², Manabu Matsuda², Kazuya Takemoto², Tsuyoshi Yamamoto², Yasuhiko Arakawa^1,3 (INQIE, Univ. of Tokyo¹, Fujitsu Labs.², IIS, Univ. of Tokyo³)

9:30 AM - 9:45 AM

[18a-A6-3] Fabrication and Characterization of Dependence on Growth Condition of MnAs/InAs Nanowires

^○Ryutaro Kodaira¹, Hiromu Fujimagari¹, Hiroaki Kato¹, Sinya Sakita¹, Sinjiro Hara¹ (Hokkaido Univ. RCIQE¹)

9:45 AM - 10:00 AM

[18a-A6-4] Lasing oscillation in a single GaAs nanowire cavity with multi-stacked InGaAs/GaAs quantum dots

^○Jun Tatebayashi¹, Satoshi Kako¹, Jinfa Ho², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (NanoQUINE, the Univ. of Tokyo¹, IIS, the Univ. of Tokyo²)

10:00 AM - 10:15 AM

[18a-A6-5] Pre-heating temperature dependence of InP nanowires grown by self-catalytic VLS mode

^○(M1)Takehiro Ogino¹, Keita Asakura¹, Kazuhiko Shimomura¹, Takao Waho¹ (Sophia Univ.¹)

Break 10:15～10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[18a-A6-6] Strain simulation for InP/InAs heterostructure nanowires

^○Kouta Tateno¹, Guoqiang Zhang¹, Hideki Gotoh¹ (NTT Basic Research Labs.¹)

10:45 AM - 11:00 AM

[18a-A6-7] Selective-Area Growth of Vertical InAs Nanowires on Ge(111) Substrate

^○Katsuhiro Tomioka^1,2, Fumiya Ishizaka¹, Eiji Nakai¹, Takashi Fukui¹ (GS-IST and RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

11:00 AM - 11:15 AM

[18a-A6-8] Observation of Au catalyst during nanowire growth by small angle X-ray scattering

^○Takuo Sasaki¹, Ryota Deki², Masamitu Takahasi^1,2 (JAEA¹, Univ. Hyogo²)

11:15 AM - 11:30 AM

[18a-A6-9] InAs nanowires on Si substrate by molecular beam epitaxy

^○Ryosuke Kizu¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

11:30 AM - 11:45 AM

[18a-A6-10] Electronic structure and electrical conductivity of InAs nanowires

^○Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie University¹)

11:45 AM - 12:00 PM

[18a-A6-11] Nonuniform growth rate of nanowires with growth time in the self-assisted vapor-liquid-solid mode

^○Guoqiang Zhang¹, Kouta Tateno¹, Hideki Gotoh¹ (NTT BRL¹)

Session information

[18a-A6-1~11] 9.2 Nanowires, nanoparticles