Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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3:00 PM - 3:15 PM

[18p-A20-7] Formation Mechanism of Buried GaAs/AlGaAs Core-shell Nanowires Studied by X-ray Diffraction

^○Go Yoshida¹, Satoshi Shimomura¹, Fumitaro Ishikawa¹ (Ehime Univ.¹)

3:15 PM - 3:30 PM

[18p-A20-8] Formation of Ga droplets on GaAs{111}A,B surfaces

^○Akihiro Ohtake¹, Takaaki Mano¹, Neul Ha^1,2 (NIMS¹, Kyushu Univ.²)

3:30 PM - 3:45 PM

[18p-A20-9] Behavior of Ga atoms deposited on GaAs (111)B surface

^○Atsushi Kawaharazuka^1,2,3, Yoshiji Horikoshi^1,2,3 (ZAIKEN¹, Waseda Univ.², JST-CREST³)

3:45 PM - 4:00 PM

△ [18p-A20-10] Volume distribution in islands growth with 2 kinds of diffusion atoms

^○(M2)Ryo Yamauchi¹, Xiangmeng Lu¹, Masataka Koyama¹, Hirotaka Sasakura^1,2, Shunichi Muto¹ (Hokkaido Univ.¹, CRIS²)

4:00 PM - 4:15 PM

△ [18p-A20-11] Growth of InAs S-K Quantum Dots on GaAs Nanowires on Silicon (100) Substrates

^○(D)Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

4:15 PM - 4:30 PM

[18p-A20-12] Fabrication of micro-pillar cavity with low-density InAs quantum dots and their PL properties

^○Hiroyuki Yamashita¹, Yuta Takahashi¹, Koichi Yamaguchi¹ (Univ. of Electro-Communication¹)

4:30 PM - 4:45 PM

[18p-A20-13] Anisotropy of in-plane photoconductivity in stacked InAs/InGaAs quantum dots structure

^○Keisuke Murakumo¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (Tokushima Univ.¹)

Break 16:45～17:00 (4:45 PM - 5:00 PM)

5:00 PM - 5:15 PM

▲ [18p-A20-14] Formation of InAs quantum dots emitting at 1.55 micron using droplet epitaxy on metamorphic InAlAs/InAs/GaAs(111)A

^〇Neul Ha^1,2, Takaaki Mano¹, Xiangming Liu¹, Takashi Kuroda^1,2, Lazutaka Mitsuishi¹, Akihiro Ohtake¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (National Institute for Materials Science (NIMS)¹, Kyushu University²)

5:15 PM - 5:30 PM

[18p-A20-15] Tuning the emission wavelength of InAs quantum dots on GaAs(001) to over 1.55 μm

^○Kenichi Shimomura¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹)

5:30 PM - 5:45 PM

[18p-A20-16] Influence of InGaAs layer on photoluminescence of InAs quantum dots with AlAs cap

^○Xiangmeng Lu¹, Akihiro Kawaguchi¹, Yosinori Nakagawa^1,2, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (Univ. Of Tokushima¹, NICHIA Corporation²)

5:45 PM - 6:00 PM

[18p-A20-17] Mechanism of the emission wavelength shift of InAs quantum dots on nitrogen δ-doped GaAs

^○Toshiyuki Kaizu^1,2, Takashi Kita² (CSREA, Kobe Univ¹, Grad. Sch. of Eng., Kobe Univ.²)

6:00 PM - 6:15 PM

[18p-A20-18] Behavior of the energy levels of InAs/InGaAsP quantum dots structure

Hajime Imai¹, ^○(M2)Moeka Yamaguchi¹, Nobuko Arai¹, Yume Ide¹ (Japan Women's Univ.¹)

6:15 PM - 6:30 PM

[18p-A20-19] Introduction of a GaP(As) layer into 1.3-μm InAs/GaAs quantum-dot structures

^○Katsuyuki Watanabe¹, Takeo Kageyama², Masahiro Kakuda², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

6:30 PM - 6:45 PM

[18p-A20-20] Growth of high-temperature-partially-capped InAs/GaAs single quantum dots with As₂ source

^○(P)Masahiro Kakuda¹, Jinkwan Kwoen², Yasutomo Ota¹, Katsuyuki Watanabe², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (The Univ. of Tokyo¹, The Univ. of Tokyo²)

6:45 PM - 7:00 PM

[18p-A20-21] InAs quantum dot structure grown by digital embedding method on InP(311)B substrate

^○Kouichi Akahane¹, Naokatsu Yamamoto¹, Tetsuya Kawanishi¹ (NICT¹)