Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.5 Compound solar cells

[18p-A28-1~16] 14.5 Compound solar cells

Thu. Sep 18, 2014 2:00 PM - 6:15 PM A28 (N304)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[18p-A28-1] Fabrication of sulfide thin film for solar cell application by Mist CVD method

^○Ryosuke Takakgi¹, Kenji Shibayama¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng.,Kyoto Univ.¹)

2:15 PM - 2:30 PM

△ [18p-A28-2] Precursor Solution Dependence on Bandgap of FeS2 Films

^○Takahiro Doe¹, Yasuaki Ishikawa¹, Shunsuke Uchiyama¹, Masahiro Horita¹, Yukiharu Uraoka¹ (NAIST¹)

2:30 PM - 2:45 PM

[18p-A28-3] Fabrication of SnS thin film by the light-assisted electrochemical deposition method and application to CdS/SnS heterojunction cells

^○(M2)Yoshikazu Tanaka¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

2:45 PM - 3:00 PM

△ [18p-A28-4] Fabrication of Cu₂ZnSnS₄ thin films by mist CVD method and effects of mist sulfurization method

^○Takumi Ikenoue¹, Yuichiro Watanabe¹, Masao Miyake¹, Tetsuji Hirato¹ (Kyoto Univ.¹)

3:00 PM - 3:15 PM

[18p-A28-5] Effects of Ammonia Solution Treatment of CZTS Thin Film Surface

^○Hisashi Miyazaki¹, Masami Aono¹, Hiroaki Kishimura¹, Hironori Katagiri² (Natl. Def. Acad.¹, Nagaoka Nat. College of Tech.²)

3:15 PM - 3:30 PM

[18p-A28-6] Effects of Annealing under Sulfur Atmosphere on Spray-Coated Cu₂ZnSn(S,Se)₄ Thin Films

^○(M1)Kanta Sugimoto¹, Jun Kuwana¹, Masanori Goto¹, Naoki Suyama¹, Yiwen Zhang², Yasuyoshi Kurokawa¹, Akira Yamada^1,3 (Dept. Physical Electronics, Tokyo Tech.¹, Technical Research Institute, Toppan Printing Co. Ltd², Photovoltaics Research Center, Tokyo Tech.³)

3:30 PM - 3:45 PM

[18p-A28-7] Cu₂ZnSn(S,Se)₄ Thin-Film Solar Cells Prepared by Two-Step Annealing

^○Masanori Goto¹, Jyun Kuwana¹, Kanta Sugimoto¹, Naoki Suyama¹, Yiwen Zhang², Yasuyoshi Kurokawa¹, Akira Yamada^1,3 (Department of Physical Electronics, Tokyo Tech.¹, Technical Research Institute, Toppan Printing Co. Ltd.², Photovoltaics Research Center, Tokyo Tech.³)

3:45 PM - 4:00 PM

[18p-A28-8] Direct Growth of Photovoltaic Grade CZTS Thin Films by Multi-stage Co-evaporation

^○Takahiro Mise¹, Shin Tajima¹, Tatsuo Fukano¹, Kazuo Higuchi¹, Tsukasa Washio², Kazuo Jimbo², Hironori Katagiri² (Toyota CRDL¹, Nagaoka NCT²)

Break 16:00～16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

▲ [18p-A28-9] Free carrier dynamics in Cu₂ZnSnS₄ single crystals investigated by optical pump - THz probe spectroscopy

^〇Phuong Le Quang^1,2, Okano Makoto¹, Yamashita Genki³, Morimoto Tomohide³, Yamada Yasuhiro¹, Nagaoka Akira^1,4, Yoshino Kenji⁴, Nagai Masaya³, Ashida Masaaki³, Kanemitsu Yoshihiko^1,2 (Kyoto University¹, JST-CREST², Osaka University³, University of Miyazaki⁴)

4:30 PM - 4:45 PM

[18p-A28-10] Effect of Water Spray Treatment on the Band Structure of CdS/Cu₂ZnSnS₄ Junction

^○Ryosuke Fujimura¹, Yoshio Hashimoto¹, Than Htay Myo¹, Noritaka Momose² (Shinshu Univ.¹, NNCT²)

4:45 PM - 5:00 PM

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu₂ZnSnSe₄ Thin film solar cells

^〇Kim Shinho, Kim Kang Min, Tampo Hitoshi, Shibata Hajime, Niki Shigeru (RCPVT, AIST)

5:00 PM - 5:15 PM

[18p-A28-12] Characterization of Interface in Wide-gap ZnCuGaSe₂ Solar Cells

^○Teruaki Yamamoto¹, Takayuki Negami¹, Koji Matsubara², Shigeru Niki² (Panasonic¹, AIST²)

5:15 PM - 5:30 PM

[18p-A28-13] Growth and Characterization of Ge substituted Cu2SnSe3 thin film solar cells

^○Kang Min Kim¹, Shinho Kim¹, Hitoshi Tampo¹, Hajime Shibata¹, Shigeru Niki¹ (AIST RCPVT¹)

5:30 PM - 5:45 PM

[18p-A28-14] Photocarrier recombination dynamics in Perovskite CH₃NH₃PbI₃ single crystal revealed by white-light pump-probe transient reflection spectroscopy

^○Takumi Yamada¹, Yasuhiro Yamada¹, Hidetaka Nishimura¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu¹ (Kyoto Univ.¹)

5:45 PM - 6:00 PM

[18p-A28-15] Photocarrier recombination dynamics in lead-halide perovskite CH₃NH₃PbI₃ thin films for solar cell application

^○Yasuhiro Yamada¹, Masaru Endo¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu^1,2 (Kyoto Univ.¹, JST-CREST²)

6:00 PM - 6:15 PM

[18p-A28-16] Room-temperature annealing effect in perovskite CH₃NH₃PbI₃ based solar cell and the correlation with photoluminescence dynamics

^○Yasuhiro Yamada¹, Masaru Endo¹, Atsushi Wakamiya¹, Yoshihiko Kanemitsu^1,2 (Kyoto Univ.¹, JST-CREST²)

Session information

[18p-A28-1~16] 14.5 Compound solar cells

△ [18p-A28-2] Precursor Solution Dependence on Bandgap of FeS2 Films

△ [18p-A28-4] Fabrication of Cu2ZnSnS4 thin films by mist CVD method and effects of mist sulfurization method

▲ [18p-A28-9] Free carrier dynamics in Cu2ZnSnS4 single crystals investigated by optical pump - THz probe spectroscopy

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu2ZnSnSe4 Thin film solar cells

△ [18p-A28-4] Fabrication of Cu₂ZnSnS₄ thin films by mist CVD method and effects of mist sulfurization method

▲ [18p-A28-9] Free carrier dynamics in Cu₂ZnSnS₄ single crystals investigated by optical pump - THz probe spectroscopy

▲ [18p-A28-11] The investigation of Ge substitution effects in Cu₂ZnSnSe₄ Thin film solar cells