Oral presentation

Code-sharing session » 6.1/9.1 Code-sharing session

[18p-A9-1~17] 6.1/9.1 Code-sharing session

Thu. Sep 18, 2014 1:15 PM - 6:30 PM A9 (E208)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:45 PM

[18p-A9-1] [INVITED]The future of dielectric ceramics

^○Yukio Sakabe¹ (Tokyo Institute of Tech.¹)

1:45 PM - 2:00 PM

[18p-A9-2] BaTiO₃- Bi(Mg_2/3Nb_1/3)O₃ Epitaxial Thin-films for High-temperature Capacitors

^〇Somu Kumaragurubaran¹, Takahiro Nagata¹, Kenichiro Takahashi², Sun-Gi Ri², Yoshifumi Tsunekawa², Setsu Suzuki², Toyohiro Chikyow¹ (National Institute for Materials Science (NIMS)¹, COMET Inc.²)

2:00 PM - 2:15 PM

[18p-A9-3] Electron Density Distribution Characteristics of (1-x){Li_0.06(Na,K)_0.94}NbO₃+xBaZrO₃ (0.035 ≦ x ≦ 0.075) in Cubic Structure

^○Yoshihiro Iwahori¹, Hiroshi Noguchi¹ (Murata Mfg. Co., Ltd¹)

2:15 PM - 2:30 PM

△ [18p-A9-4] Phonon Analysis of BaTiO₃ Single Crystal by Far-infrared Ellipsometer

^○(M1)Kazuki Kanehara¹, Takuya Hoshina¹, Hiroaki Takeda¹, Takaaki Tsurumi¹ (Tokyo Tech.¹)

2:30 PM - 2:45 PM

△ [18p-A9-5] Growth and Characterization of Hexagonal BaTiO₃ Single Crystals for Thermoelectric Materials

^○Shintaro Yasui¹, Yusuke Ishimoto¹, Takao Shimizu², Tomoyasu Taniyama¹, Mitsuru Itoh¹ (Tokyo Tech. MSL¹, Tokyo Tech. MCES²)

2:45 PM - 3:00 PM

[18p-A9-6] Microstructure and dielectric properties of BaTiO₃ nanocube ordered assemblies sintered at various temperatures

^○Ken-ichi Mimura¹, Kazumi Kato¹ (AIST¹)

Break 15:00～15:15 (3:00 PM - 3:15 PM)

3:15 PM - 3:45 PM

[18p-A9-7] [INVITED]Evolution and Prospect of Ferroelectric and its Thin Film Researches

^○Masanori Okuyama¹ (Osaka Univ.¹)

3:45 PM - 4:00 PM

[18p-A9-8] Study on the lattice matched growth of BiFeO₃ film

^○Masaaki Aramaki¹, Kento Kariya¹, Takeru Douan¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (Osaka Pref. Univ.¹)

4:00 PM - 4:15 PM

[18p-A9-9] Effect of the tensile strain on the crystal structure of BiFeO₃ Epitaxial Thin Films

^○(M1)Tomoya Komae¹, Masaaki Aramaki¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (oosakafuritsudaigaku¹)

4:15 PM - 4:30 PM

[18p-A9-10] Influence of Mn and Zn Doping on Electrical Properties of Single -domain BiFeO₃ Thin films

^○(M1)Koji Shigematsu¹, Seiji Nakashima¹, Hironori Fujisawa¹, Masaru Shimizu¹ (Univ. of Hyogo¹)

4:30 PM - 4:45 PM

[18p-A9-11] Oriental control of bismuth ferrite films using buffer layer and their characterization

^○Kohei Nagasaka¹, Jin Woong Kim², Hiromi Shima², Ken Nishida², Naoya Oshima³, Hiroshi Funakubo³, Hiroshi Uchida¹ (Sophia Univ.¹, Nat. Def. Acad.², Tokyo Tech.³)

4:45 PM - 5:00 PM

▲ [18p-A9-12] Structure and magneto-electric properties of tetragonal BiFeO₃ with high-spin, low spin and intermediate-spin Fe³⁺ under biaxial stress by first-principles calculations

^○Dan Ricinschi¹ (Tokyo Inst. Technol.¹)

Break 17:00～17:15 (5:00 PM - 5:15 PM)

5:15 PM - 5:30 PM

[18p-A9-13] Fabrication of BiFe_1-xCo_xO₃ thin films with a giant c/a ratio and their crystal structures and electronic properties

^○Keisuke Shimizu¹, Hajime Hojo¹, Masaki Azuma¹ (Tokyo Tech¹)

5:30 PM - 5:45 PM

[18p-A9-14] Growth of {110} one-axis-oriented perovskite-type oxide films using (101) PdO//(111) Pd buffer layers and their characterization

^○Naoya Oshima¹, Yoshitaka Ehara¹, Takahiro Oikawa¹, Hiroki Tanaka¹, Hiroshi Uchida², Kiyoshi Uchiyama³, Hiroshi Funakubo¹ (Tokyo Tech.¹, Sophia Univ.², Tsuruoka National Coll. of Tech.³)

5:45 PM - 6:00 PM

[18p-A9-15] Effect of RTA Time on Bismuth Titanate Thick Films

^○Masaki Yamaguchi^1,2, Yoichiro Masuda³ (Fac. of Eng., Shibaura Inst. of Tech.¹, RCGI, Shibaura Inst. of Tech.², Fac. of Eng., Hachinohe Inst. of Tech.³)

6:00 PM - 6:15 PM

[18p-A9-16] Crystallization Behavior and Ferroelectric Properties of VDF/TrFE Copolymer Thin Film with Low Curie Temperature

^○Takashi Nakajima¹, Shin-ichi Yamaura¹, Takeo Furukawa², Soichiro Okamura³ (IMR Tohoku Univ.¹, Kobayasi Inst. Phys. Res.², Tokyo Univ. of Sci.³)

6:15 PM - 6:30 PM

△ [18p-A9-17] Influence of Electrode Materials on Polarization-Induced-Resistance Switching Effect in Ultrathin VDF/TrFE Copolymer Films

^○Shogo Usui¹, Takashi Nakajima², Yoichiro Hashizume¹, Soichiro Okamura¹ (Tokyo Univ. of Sci.¹, IMR Tohoku Univ.²)

Session information

[18p-A9-1~17] 6.1/9.1 Code-sharing session

△ [18p-A9-4] Phonon Analysis of BaTiO3 Single Crystal by Far-infrared Ellipsometer

△ [18p-A9-5] Growth and Characterization of Hexagonal BaTiO3 Single Crystals for Thermoelectric Materials

▲ [18p-A9-12] Structure and magneto-electric properties of tetragonal BiFeO3 with high-spin, low spin and intermediate-spin Fe3+ under biaxial stress by first-principles calculations

△ [18p-A9-17] Influence of Electrode Materials on Polarization-Induced-Resistance Switching Effect in Ultrathin VDF/TrFE Copolymer Films

△ [18p-A9-4] Phonon Analysis of BaTiO₃ Single Crystal by Far-infrared Ellipsometer

△ [18p-A9-5] Growth and Characterization of Hexagonal BaTiO₃ Single Crystals for Thermoelectric Materials

▲ [18p-A9-12] Structure and magneto-electric properties of tetragonal BiFeO₃ with high-spin, low spin and intermediate-spin Fe³⁺ under biaxial stress by first-principles calculations