Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-C5-1~19] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:30～13:30 (12:30 PM - 1:30 PM)

1:30 PM - 2:00 PM

[18p-C5-1] [JSAP Paper Award Speech]（30min.）
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

^○Toru Kinoshita^1,2, Toshiyuki Obata¹, Toru Nagashima¹, Hiroyuki Yanagi¹, Baxter Moody³, Seiji Mita³, Shin-ichiro Inoue^2,4, Yoshinao Kumagai⁵, Akinori Koukitu⁵, Zlatko Sitar^3,6 (Tokuyama¹, Kobe University², HexaTech³, NICT⁴, Tokyo University of Agriculture and Technology⁵, North Carolina State University⁶)

2:00 PM - 2:15 PM

[18p-C5-2] AlN Growth Temperature Dependence on the GaN/AlN/GaN Water Splitting Photocathode

^○Akihiro Nakamura¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Tokyo Univ.¹, Global Solar+ Initiative²)

2:15 PM - 2:30 PM

[18p-C5-3] Study of the high reflective Ag electrode on high carrier concentration Si-doped Al0.03Ga0.97N

^○Shunsuke Kawai¹, Daisuke Iida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC.Inst²)

2:30 PM - 2:45 PM

▲ [18p-C5-4] High light-extraction efficiency induced by evanescent wave coupling effect in GaN-based light-emitting diodes

^○(P)Guodonog HAO¹, Ahmed Mohammed Jahir¹, Tokio Takahashi¹, Mitsuaki Shimizu¹, Xue-Lun Wang¹, Hiroyuki Kishi², Yukiko Hayashi², Keigo Takeguchi² (AIST¹, Asahi Kasei Corp.²)

2:45 PM - 3:00 PM

[18p-C5-5] Improvement in performance of GaN-based LED using ZnO transparent electrode

^○Yuta Akatsuka¹, Takashi Egawa¹, Makoto Miyoshi¹ (Nagoya Institute of Technology¹)

3:00 PM - 3:15 PM

[18p-C5-6] Low resistance of current confinement structures using nitride-based tunnel junctions

^○Masataka Ino¹, Daichi Minamikawa¹, Tetuya Takeuchi¹, Satosi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac.Sci.&Eng,Meijo Univ.¹, ARC,Nagoya Univ.²)

3:15 PM - 3:30 PM

[18p-C5-7] High-speed Optical Output Modulation of Nitride-based Light-Emitting Transistors

^○Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

Break 15:30～15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:15 PM

[18p-C5-8] [JSAP Paper Award Speech]（30min.）
Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

^○Mitsuru Funato¹, Yoon Seok Kim¹, Takayuki Hira¹, Akio Kaneta¹, Yoichi Kawakami¹, Takashi Miyoshi², Shin-ichi Nagahama² (Kyoto University¹, Nichia²)

4:15 PM - 4:30 PM

△ [18p-C5-9] Modulation spectroscopic investigation on internal electric fields in InGaN/GaN LEDs

^○Tomoyuki Tanikawa^1,2, Ryuji Katayama^1,2, Kanako Shojiki¹, Shigeyuki Kuboya¹, Takashi Matsuoka^1,2, Yoshio Honda³, Hiroshi Amano^3,4 (IMR, Tohoku Univ.¹, JST-CREST², Nagoya Univ.³, Akasaki Research Center⁴)

4:30 PM - 4:45 PM

[18p-C5-10] Optical characterization of InGaN/GaN single quantum well nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE) technique

^○Ryo Hachiya¹, Ryo Kita¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Center²)

4:45 PM - 5:00 PM

[18p-C5-11] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique and thermal analysis

^○Ryo Kita¹, Ryo Hachiya¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

5:00 PM - 5:15 PM

[18p-C5-12] Analysis of Lattice Distortion of Superlattice Structure of Nitride Semiconductor by Molecular Dynamics

^○(M2)Masahiro Amekawa¹, Yoshinori Yoshimura¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM,Kyushu Univ.²)

5:15 PM - 5:30 PM

[18p-C5-13] Theoretical study for surface reconstructions and adsorption-desorption behavior of Al atom on AlN semipolar surfaces

^○Yoshitaka Takemoto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

5:30 PM - 5:45 PM

[18p-C5-14] Nitride semiconductor to silicon direct bonding at room temperature

^○Kazuaki Tsuchiyama¹, Hiroyuki Tahara¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,2, Akihiro wakahara¹ (Toyohashi Univ. Tech¹, EIIRIS²)

Break 17:45～18:00 (5:45 PM - 6:00 PM)

6:00 PM - 6:15 PM

[18p-C5-15] First-Principles Calculation of C-N Bond Energy on GaN Growth Surface

^○Takahiro Kawamura^1,2, Hiroki Imabayashi², Mihoko Maruyama², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (Mie Unv.¹, Osaka Univ.²)

6:15 PM - 6:30 PM

[18p-C5-16] Growth of high transparency semipolar GaN crystals by the Na-flux method

^○Koshi Nakamura¹, Hideo Takazawa¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Songbaek Choe^1,2, Yukihiro Morita^1,2, Yusuke Mori¹ (Graduate school of Engineering, Osaka Univ.¹, Panasonic Corporation.²)

6:30 PM - 6:45 PM

[18p-C5-17] Fabrication of Al-polar AlN layers by Liquid Phase Epitaxy using Ga-Al solution under low oxygen partial pressure

^○(M1)Ryuta Sekiya¹, Masayoshi Adachi¹, Makoto Ohtsuka¹, Masashi Sugiyama², Junji Ida², Hiroyuki Fukuyama¹ (Tohoku Univ. IMRAM¹, Sumitomo Metal Mining Co. Ltd.²)

6:45 PM - 7:00 PM

[18p-C5-18] High speed & high quality bulk GaN crystal growth by acidic ammonothermal method

^○Makoto Saito^1,2, Quanxi Bao^1,3, Kouhei Kurimoto^1,3, Daisuke Tomida¹, Kazunobu Kojima¹, Yoshiki Yamazaki¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Toru Ishiguro¹, Chiaki Yokoyama¹, Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corp.², The Japan Steel Works³)

7:00 PM - 7:15 PM

△ [18p-C5-19] GaN lateral growth by liquid phase electro epitaxy using mesa-shaped template substrate

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Muneki Iwakawa¹, Yousuke MIzuno¹, Jyumpei Yamada¹, Ryouta Yasui¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (Meijo Univ.¹)