[19a-A16-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A16 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[19a-A16-1] Fabrication of tensile strained Ge bridge structures

^○Daiki Sodeoka¹, Hideki Kuruma¹, Masahiro Yoshimoto¹, Pablo Vaccaro^2,3, Isabel Alonso³, Miquel Garriga³, Alejandro Goni^2,3 (Kyoto Institute of Technology¹, ICREA², ICMAB-CSIC³)

9:45 AM - 10:00 AM

△ [19a-A16-2] Observation of Anisotropic Biaxial Stress Relaxation in Mesa-Structure of High Ge Concentration Strained-SiGe by Exciting TO/LO Phonons Spectra with Oil-Immersion Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Motohiro Tomita^1,3, Kazuma Takeuchi¹, Ryo Yokogawa¹, Koji Usuda², Atsushi Ogura¹ (Meiji Univ.¹, AIST-GNC², JSPS Research Fellow DC³)

10:00 AM - 10:15 AM

△ [19a-A16-3] Evaluation of Stress Relaxation Profile Depending on Ge Concentration in Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

10:15 AM - 10:30 AM

[19a-A16-4] Evaluation of Anisotropic Biaxial Stress in Uniaxially Strained-SiGe/Si Substrate Fabricated by Selective Ion Implantation Using Oil-immersion Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Motohiro Tomita^1,3, Kazuma Takeuchi¹, Ryo Yokogawa¹, Eisuke Yonekura², Kentarou Sawano², Hiroshi Nohira², Atsushi Ogura¹ (Meiji Univ.¹, Tokyo City Univ.², JSPS Research Fellow DC³)

10:30 AM - 10:45 AM

[19a-A16-5] TOF-SIMS measurement of Ge directly grown on Si substrate(II)

^○Kenichiro KONO¹, Songbong PARK², Yasuhiko ISHIKAWA², Kazumi WADA² (NIMS¹, Univ. of Tokyo²)

10:45 AM - 11:00 AM

[19a-A16-6] Improvement of flatness of Ge film on Si substrate by using sub-monolayer carbon

^○Shinji Hatakeyama¹, Yuhki Itoh¹, Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

11:00 AM - 11:15 AM

[19a-A16-7] Effect of growth temperature on Ge dot formation using Si-C bonds

^○Yuhki Satoh¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:15 AM - 11:30 AM

△ [19a-A16-8] Suppression of intermixing in Ge/Si system by interfacial sub-monolayer carbon with Ge buffer layer

^○(M2)Yuhki Itoh¹, Ryo Hayase¹, Sinji Hatakeyama¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:30 AM - 11:45 AM

[19a-A16-9] Two-step Ge thin film growth on Si(100) by using MBE

^○Ryo Hayase¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:45 AM - 12:00 PM

△ [19a-A16-10] Fabrication of high-mobility strained Ge-on-Insulator (GOI) by wafer bonding

^○Tomonori Nagashima¹, Hironori Katsumata¹, Kohei Hamaya^2,3, Masanobu Miyao³, Kentaro Sawano¹ (Tokyo city univ.¹, Osaka univ.², Kyushu univ.³)