Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[19a-A26-1~12] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 9:00 AM - 12:15 PM A26 (E319)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-A26-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

^○Keisuke Nishida¹, Xuejun Xu¹, Koki Takabayashi¹, Keisuke Yoshida¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo city Univ.¹)

9:15 AM - 9:30 AM

[19a-A26-2] Complementarity of IR-excited Auger electron emission to thermal excited emission in Si-nc:P

^○Masashi Ishii¹, Iain Crowe², Matthew Halsall², Andrew Knights³, Russell Gwilliam⁴, Bruce Hamilton² (NIMS¹, Univ. Manchester², McMaster Univ.³, Univ. Surrey⁴)

9:30 AM - 9:45 AM

[19a-A26-3] Fabrication of (NH4)2SiF6 particles with an innovative chemical growth method

^○Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Graduate School of Denki Univ.¹, National Institute for Materials Science²)

9:45 AM - 10:00 AM

△ [19a-A26-4] Fabrication of silicon nanoparticles by a stirrer

^○Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Graduate School of Denki Univ.¹, National Institute for Materials Science²)

10:00 AM - 10:15 AM

△ [19a-A26-5] Valley-selective resonance optical excitation in compound semiconductors

^○Tetsuya Sakamoto¹, Yuhsuke Yasutake^1,2, Susumu Fukatsu¹ (UTokyo¹, JST-PRESTO²)

10:15 AM - 10:30 AM

△ [19a-A26-6] Observation of the sub-picosecond spin relaxation in InGaAsP bulk

^○Ryo Harasawa¹, Naoki Yamamoto¹, Hao Wu¹, Takanori Aritake¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

10:30 AM - 10:45 AM

△ [19a-A26-7] Spin relaxation in Zn doped GaAs grown by VGF method

^○Yuya Yasue¹, Kazuki Honda¹, Masaki Asakawa¹, Atsushi Tackeuchi¹ (Waseda Univ.¹)

Break 10:45～11:00 (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[19a-A26-8] Effects of electric field on coupled spin states in InGaAs quantum dots and wells

^○Junichi Takayama¹, Takayuki Kiba¹, Takafumi Yamamura¹, Yuzuru Nomura¹, Subagyo Agus¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Hokkaido Univ.¹)

11:15 AM - 11:30 AM

[19a-A26-9] EL properties of LEDs using metallic ferromagnetic electrodes and InGaAs-based quantum structures

^○Yuzuru Nomura¹, Junichi Takayama¹, Takayuki Kiba¹, Subagyo Agus¹, Takafumi Yamamura¹, Xiaojie Yang¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Graduate School of IST, Hokkaido University¹)

11:30 AM - 11:45 AM

[19a-A26-10] Estimation of the imaginary parts of the third-order nonlinear susceptibility tensor using Z-scan technique with elliptical polarization

^○(M2)Hikaru Hara¹, Hiroyuki Bado¹, Tomohisa Shinozaki¹, Masaki Oishi¹, Toshio Matsusue¹ (Chiba Univ.¹)

11:45 AM - 12:00 PM

[19a-A26-11] Polarization dependence of two-photon absorption with circular- and linear-polarized two beams on InP(1\bar{1}0)

^○(D)Masaki Oishi¹, Hiroyuki Bando¹, Takahide Mishina¹, Toshio Matsusue¹ (Chiba Univ.¹)

12:00 PM - 12:15 PM

[19a-A26-12] Analysis of GaInP raman spectra considering fano interference

^○(M2)Hironori Sakamoto¹, Kazuyuki Ishihara¹, Bei Ma¹, Morita Ken¹, Ishitani Yoshihiro¹ (Chiba univ.¹)