Oral presentation

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Fri. Sep 19, 2014 9:00 AM - 11:45 AM S2 (S2)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

▲ [19a-S2-1] Impact of Selection of Metallic Elements in Oxides on Voltage-induced Change of Interface Magnetic Anisotropy of CoFeB/MO_x

^○Ryusuke Oishi¹, Koji Kita¹ (The Univ. of Tokyo¹)

9:15 AM - 9:30 AM

▲ [19a-S2-2] Electric field modulation of magnetization in MgO/Co/Pt structure

^○Kihiro Yamada¹, Haruka Kakizakai¹, Tomohiro Koyama², Masashi Kawaguchi¹, Takahiro Moriyama¹, Daichi Chiba², Teruo Ono¹ (ICR, Kyoto Univ.¹, The Univ. of Tokyo²)

9:30 AM - 9:45 AM

▼ [19a-S2-3] Voltage induced anisotropy change in FeGd

^○(M1)Kazuhito Tanaka^1,2, shinji Miwa^1,2, Yoichi Shiota^1,2, Eiiti Tamura¹, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, CREST²)

9:45 AM - 10:00 AM

▲ [19a-S2-4] Stabilization of self-oscillation in spin torque oscillator by field-like torque

^○Tomohiro Taniguchi¹, Sumito Tsunegi², Hitoshi Kubota¹, Hiroshi Imamura¹ (AIST¹, CNRS²)

10:00 AM - 10:15 AM

▲ [19a-S2-5] Enhancement of spin-torque diode sensitivity at high-frequency by utilizing dynamic coupling of free and reference layers

^○Rie Matsumoto¹, Hitoshi Kubota¹, Yamaji Toshiki¹, Hiroko Arai¹, Hiroshi Imamura¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (AIST¹)

10:15 AM - 10:30 AM

▲ [19a-S2-6] Synchronized Oscillation with Narrow Spectral Linewidth in a Dual Free-Layer Heusler-Alloy-Based Spin-Torque Oscillator

^○Tazumi Nagasawa¹, Kiwamu Kudo¹, Hirofumi Suto¹, Michinaga Yamagishi¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba Co. RDC¹)

10:30 AM - 10:45 AM

▲ [19a-S2-7] Junction size dependence of intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure

^○Hideo Sato^1,2, Eli Enobio^1,3, Michihiko Yamanouchi^1,3, Shoji Ikeda^1,2,3, Shunsuke Fukami^1,2, Fumihiro Matsukura^4,1,3, Hideo Ohno^1,2,3,4 (CSIS, Tohoku Univ.¹, CIES, Tohoku Univ.², Lab. for Nanoelectronics and Spintonics, RIEC, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

10:45 AM - 11:00 AM

△ [19a-S2-8] In-plane anisotropy in a CoFeB-MgO magnetic tunnel junction detected by magnetoresistance

^○Eriko Hirayama¹, Shun Kanai¹, Hideo Sato^2,3, Fumihiro Matsukura^2,4, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², CIES, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

11:00 AM - 11:15 AM

▲ [19a-S2-9] Improvement of Annealing Stability in Magnetic Sensors Based on Magnetic Tunnel Junction by Using CoFeB/CoFeAlB Sensing Bilayer

^○(D)Takafumi Nakano¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Toshifumi Yano², Kenichi Ao², Yasuo Ando¹ (Tohoku Univ.¹, DENSO CORP.²)

11:15 AM - 11:30 AM

▲ [19a-S2-10] Fabrication of Magnetic Tunnel Junctions with Co₂Fe_0.4Mn_0.6Si Heusler Alloy for Magnetic Field Sensor Devices

^○Atsuo Ono¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹)

11:30 AM - 11:45 AM

[19a-S2-11] Electrostatic control of the tunnel-magnetoresistance polarity in a Ni/Al/Ni-single-electron transistor

Ryusuke Kobayashi¹, ^○Naoki Tsujimichi¹, Hiroshi Shimada¹ (Univ. of Electro-Cummunications¹)