Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[19p-A27-1] Fabrication and characterization of BaSi₂ epitaxial films on Ge(111) substrate by MBE

^○Ryota Takabe¹, Masakazu Baba¹, Weijie Du¹, Kaoru Toko¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Nagoya Univ.², JST-CREST³)

2:15 PM - 2:30 PM

[19p-A27-2] Observation of a BaSi2 pn junction on Si(111) by Kelvin probe force microscopy

^○Daichi Tsukahara¹, Masakazu Baba¹, Kaoru Toko¹, Takashi Kimura², Kentaro Watanabe^1,2, Takashi Sekiguchi², Takashi Suemasu^1,3 (Univ. Tsukuba¹, NIMS², JST-CREST³)

2:30 PM - 2:45 PM

[19p-A27-3] Relation between passivation and defect levels on the surface of n-BaSi₂ epitaxial films on Si(111)

^○Hiroki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Tsukuba Univ.¹, JST-CREST²)

2:45 PM - 3:00 PM

[19p-A27-4] Activation process and electrical characterization of B-doped p-type BaSi₂ epilayers

^○Ning Zhang¹, Daiki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Masakazu Baba¹, Daichi Tsukahara¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST JST²)

3:00 PM - 3:15 PM

▲ [19p-A27-5] Fabrication of BaSi₂ films by RF sputtering on a heated glass substrate with pre-deposition Si layer

^○Nurul Amal AbdulLatiff¹, Seiya Yokoyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys. Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

3:15 PM - 3:30 PM

△ [19p-A27-6] Formation of Thick BaSi₂ Evaporated Films by Use of Silicon Supply Layer

^○Kosuke Hara^1,2, Yoshihiko Nakagawa¹, Takashi Suemasu^2,3, Noritaka Usami^1,2 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

Break 15:30～15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[19p-A27-7] Evaluation of Carrier Lifetime of BaSi₂ Thin Films Grown by Vacuum Evaporation

^○(M1)Yoshihiko Nakagawa¹, Kosuke Hara^1,2, Takashi Suemasu^2,3, Noritaka Usami^1,2 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

4:00 PM - 4:15 PM

[19p-A27-8] Energetic Evaluation of the Possibility of Interstitial Doping of BaSi2

^○Yoji Imai^1,2, Mitsugu Sohma¹, Takashi Suemasu² (AIST¹, Univ. Tsukuba²)

4:15 PM - 4:30 PM

[19p-A27-9] Theoretical study of impurity atom diffusion in BaSi2

^○Yuki Osuga¹, Takashi Nakayama¹ (Chiba Univ.¹)

4:30 PM - 4:45 PM

[19p-A27-10] First-principles studies on (Sr,Ba)(Si,Ge)2 for thin-film solar cell applications

^○Naoto Umezawa¹, Mukesh Kumar¹, Motoharu Imai¹ (NIMS¹)

4:45 PM - 5:00 PM

[19p-A27-11] Oxidation behavior of β-FeSi2/Si Nano-Composite Phases by IR absorption measurements

^○Kosuke Morita¹, Tatsuya Nakamura¹, Hiroyuki Kobayashi¹, Tatsumi Takahide¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (Kyutech.CSE¹, JAEA ASRC²)

5:00 PM - 5:15 PM

△ [19p-A27-12] Photoluminescence Property of Nano-Composite Phases of β-FeSi₂ Nanocrystals Embedded in SiO₂

^○Takahide Tatsumi¹, Tatsuya Nakamura¹, Kosuke Morita¹, Hiroyuki Kobayashi¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (Kyutech. CSE¹, JAEA ASRC²)

Break 17:15～17:30 (5:15 PM - 5:30 PM)

5:30 PM - 5:45 PM

[19p-A27-13] Polarized Raman spectra of the β-FeSi₂(100)//Si(001) epitaxial film

^○Haruki Yamaguchi¹, Hiroaki Tsukamoto¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

5:45 PM - 6:00 PM

[19p-A27-14] Correlation between crystal defects and residual carrier density in β-FeSi₂ polycrystalline films

^○Takahiko Higashi¹, Tetsu Hattori¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

6:00 PM - 6:15 PM

[19p-A27-15] Carrier density dependence of I-V curves in n-β-FeSi₂ polycrystalline/p-Si heterojunctions

^○Tetsu Hattori¹, Takahiko Higashi¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

6:15 PM - 6:30 PM

[19p-A27-16] Residual oxygen atoms in β-FeSi₂ with SiN capped annealing

^○Takafumi Kato¹, Hitoshi Wakabayashi², Akito Sasaki², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE²)

6:30 PM - 6:45 PM

[19p-A27-17] Influence of solvents of ball-milling in the formation of β-FeSi₂by electric discharge plasma activated sintering

^○(M2)Ikki Matsumoto¹, Hiroshi Katsumata¹, Takasi Takahashi², Hiroshi Souma², Izumi Azumaya², Masaaki Ishiyama² (Meiji Univ¹, Elenix, Inc.²)

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