Session information

Oral presentation

17. Nanocarbon Technology » 17.1 Growth technology

[19p-B3-1~16] 17.1 Growth technology

Fri. Sep 19, 2014 1:15 PM - 5:30 PM B3 (Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[19p-B3-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electrical and thermal properties of isotopically modified graphene heterojunction

^○Yuki Anno¹, Kuniharu Takei¹, Seiji Akita¹, Takayuki Arie¹ (Osaka Pref. Univ.¹)

1:30 PM - 1:45 PM

[19p-B3-2] [Young Scientist Oral Presentation Award Speech]（15min.）
In-situ blackbody radiation microscopy of CVD growth of graphene

^○Tomoo Terasawa¹, Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[19p-B3-3] Role of [1-100] steps in the first-graphene-layer growth on SiC(0001) Si face

^○Hiroyuki Kageshima^1,2, Hiroki Hibino², Hiroshi Yamaguchi², Masao Nagase³ (Shimane Univ.¹, NTT Basic Research Labs.², Univ. Tokushima³)

2:00 PM - 2:15 PM

[19p-B3-4] First-Principles Simulations for Graphene Growth Induced by Si sublimation from Stepped SiC Surface

^○Yuki Ono^1,4, Takahiro Yamasaki^2,4, Takahisa Ohno^2,3,4 (1¹, 2², 3³, 4⁴)

2:15 PM - 2:30 PM

[19p-B3-5] Epitaxial Growth of Graphene on SiC by Chemical Vapor Deposition

^○Takashi Kajiwara¹, Tomoya Takasaki¹, Shinichi Kimoto¹, Anton Visikovskiy¹, Fumio Komori², Satoru Tanaka¹ (Kyushu Univ.¹, Univ. of Tokyo²)

2:30 PM - 2:45 PM

[19p-B3-6] Study of Surface Dynamics of Graphene Segregated Nickel using Silver Particles

^○Hiroki Kato¹, Yuta Momiuchi¹, Junro Takahashi¹, Yoshikazu Homma¹ (Tokyo Univ. of Science¹)

2:45 PM - 3:00 PM

[19p-B3-7] Growth of Large Single-Crystal Graphene Domains by Alcohol CVD Method

^○Kohei Tsushima¹, Masaki Sota¹, Xiao Chen¹, Shohei Chiashi¹, Shigeo Maruyama¹ (Univ. of Tokyo¹)

3:00 PM - 3:15 PM

[19p-B3-8] The effect of reduction methods on quality of graphene synthesized from graphene oxide on metal

^○Seiji Obata¹, Hiroshige Tanaka², Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

Break 15:15～15:30 (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[19p-B3-9] Thickness dependence of multi-layer graphene synthesis with epitaxial catalysts and its electrical properties

^○Daiyu Kondo^1,2, Haruhisa Nakano¹, Bo Zhou¹, Akiko I¹, Kenjiro Hayashi^1,2, Shintaro Sato^1,2, Naoki Yokoyama^1,2 (AIST¹, Fujitsu Labs²)

3:45 PM - 4:00 PM

[19p-B3-10] Fabrication of multilayer graphene by precipitation method using Al2O3 barrier layer

^○Manabu Suzuki¹, Jumpei Yamada¹, Yuki Ueda¹, sigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

4:00 PM - 4:15 PM

▲ [19p-B3-11] Bottom-Up Graphene-Nanoribbon Fabrication Reveals Chiral Edges and Enantioselectivity

^〇Patrick Han¹, Kazuto Akagi¹, Filippo Federici Canova¹, Hirotaka Mutoh¹, Susumu Shiraki¹, Katsuya Iwaya², Paul Weiss³, Naoki Asao¹, Taro Hitosugi¹ (WPI-AIMR, Tohoku Univ.¹, RIKEN CEMS², UCLA³)

4:15 PM - 4:30 PM

[19p-B3-12] Selective bilayer graphene synthesis by plasma CVD

^○Ryuichi Kato¹, Yuki Okigawa^1,2, Masatou Ishihara^1,2, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (TASC¹, AIST NTRC²)

4:30 PM - 4:45 PM

[19p-B3-13] The preparation of high thermal conductive multilayer graphene films from ultra-thin polymer films

^○Atsushi Tatami^1,2, Masamitsu Tachibana^1,2, Takashi Yagi^2,3, Megumi Akoshima^2,3, Mutsuaki Murakami^1,2 (Kaneka Corporation¹, TASC Graphene Division², National Institute of Advanced Industrial Science and Technology³)

4:45 PM - 5:00 PM

[19p-B3-14] Growth of Graphene and Nitrogen-Doped Graphene Using Novel Molecules

^○Tokio Katoh¹, Gaku Imamura¹, Seiji Obata¹, Malli Bhanuchandra², Hideki Yorimitsu², Koichiro Saiki¹ (Univ. of Tokyo¹, Kyoto Univ.²)

5:00 PM - 5:15 PM

[19p-B3-15] Relationship between Conductivity and Domain Size for Graphene Synthesized by Plasma Treatment

^○Yuki Okigawa^1,2, Ryuichi Kato², Masatou Ishihara^1,2, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (AIST¹, TASC²)

5:15 PM - 5:30 PM

[19p-B3-16] Roll-to-Roll deposition of graphene on flexible web by low-temperature plasma CVD

^○Takatoshi Yamada^1,2, Nayuta Shimada², Kazuki Uekusa², Masataka Hasegawa^1,2 (AIST¹, TASC²)

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