The investigation of step structure with different TSDs conversion behavior during 4H-SiC solution growth

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 9:00 AM - 12:30 PM A17 (E308)

9:30 AM - 9:45 AM

^○Shiyu Xiao¹, Natsumi Hara¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya University¹)

Keywords:SiC